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| v01.0101 MICROWAVE CORPORATION HMC174MS8 GaAs MMIC T/R SWITCH DC - 3 GHz Features Ultra Small Package: MSOP8 High Third Order Intercept: +60 dBm Single Positive Supply: +3 to +10V High RF power Capabilty Typical Applications The HMC174MS8 is ideal for: * ISM Applications * PCMCIA Wireless Cards * Portable Wireless Functional Diagram General Description The HMC174MS8 is a low-cost SPDT switch in an 8-lead MSOP package for use in transmitreceive applications which require very low distortion at high signal power levels. The device can control signals from DC to 3.0 GHz and is especially suited for 900 MHz, 1.8 - 2.2 GHz, and 2.4 GHz ISM applications with only 0.5 dB loss. The design provides exceptional intermodulation performance; providing a +60 dBm third order intercept at 8 Volt bias. RF1 and RF2 are reflective shorts when "OFF". On-chip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. 14 SWITCHES - SMT Electrical Specifications, TA = +25 C, Vdd = +5 Vdc, 50 Ohm System Parameter Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz 0/8V Control 0.5 - 1.0 GHz 0.5 - 3.0 GHz 0.5 - 1.0 GHz 0.5 - 3.0 GHz DC - 3.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 10 24 ns ns 22 20 17 13 20 16 13 9 35 34 55 55 Min. Typ. 0.5 0.5 0.7 1.4 25 24 21 17 28 21 17 11 39 38 60 60 Max. 0.7 0.8 1.0 1.8 Units dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm Insertion Loss Isolation Return Loss Input Power for 1dB Compression Input Third Order Intercept Switching Characteristics 0/8V Control 14 - 20 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0101 HMC174MS8 GaAs MMIC T/R SWITCH DC - 3 GHz GaAs MMIC Insertion Loss 0 -1 SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Isolation 0 INSERTION LOSS (dB) -10 -2 ISOLATION (dB) 0 1 2 3 -20 -3 -30 -4 -5 FREQUENCY (GHz) -40 0 1 2 3 FREQUENCY (GHz) Return Loss 0 INPUT RETURN LOSS (dB) 14 SWITCHES - SMT 10 12 -10 -20 -30 -40 0 1 2 3 FREQUENCY (GHz) Input 0.1 and 1.0 dB Compression vs. Bias Voltage 45 1dB at 900MHz COMPRESSION (dBm) 1db at 1900MHz 40 Input Third Order Intercept vs. Bias Voltage 65 60 900MHz IP3 (dBm) 55 50 45 40 35 1900MHz 35 0.1dB at 900MHz 30 0.1dB at 1900MHz 25 2 4 6 8 BIAS (Volts) 10 12 2 4 6 8 BIAS (Volts) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 21 MICROWAVE CORPORATION v01.0101 HMC174MS8 GaAs MMIC T/R SWITCH DC - 3 GHz Compression vs. Bias Voltages Carrier at 900 MHz Bias Vdd (Volts) 3 4 5 8 10 Input Power for 0.1 dB Compression (dBm) 27 30 32 36 37 Input Power for 1.0 dB Compression (dBm) 31 34 36 39 40 Carrier at 1900 MHz Input Power for 0.1 dB Compression (dBm) 26 29 31 35 36 Input Power for 1.0 dB Compression (dBm) 30 33 35 38 39 Distortion vs. Bias Voltage 1 Watt Carrier at 900 MHz Bias Vdd (Volts) 3 4 5 8 10 Third Order Intercept (dBm) 43 48 53 60 60 Second Order Intercept (dBm) 71 85 90 90 90 Second Harmonic (dBc) 45 55 56 58 59 1 Watt Carrier at 1900 MHz Third Order Intercept (dBm) 42 46 51 60 60 Second Order Intercept (dBm) 78 88 87 90 90 Second Harmonic (dBc) 55 65 58 59 60 Caution: Do not operate in 1dB compression at power levels above +35dBm and do not `hot switch' power levels greater than +23dBm (Vdd = +5Vdc). 14 SWITCHES - SMT Truth Table *Control Input Voltage Tolerances are 0.2 Vdc Bias Vdd (Vdc) 3 3 3 5 5 5 10 10 10 5 5 Control Input* A (Vdc) 0 0 Vdd 0 0 Vdd 0 0 Vdd -Vdd Vdd B (Vdc) 0 Vdd 0 0 Vdd 0 0 Vdd 0 Vdd -Vdd Bias Current Idd (uA) 30 25 25 110 115 115 380 495 495 600 600 Control Current Ia (uA) -15 -25 0 -55 -100 -15 -190 -275 -220 -600 225 Control Current Ib (uA) -15 0 -25 -55 -15 -100 -190 -220 -275 225 -600 Signal Path State RF to RF1 OFF ON OFF OFF ON OFF OFF ON OFF ON OFF RF to RF2 OFF OFF ON OFF OFF ON OFF OFF ON OFF ON 14 - 22 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0101 HMC174MS8 GaAs MMIC T/R SWITCH DC - 3 GHz Absolute Maximum Ratings Bias Voltage Range (Vdd) Control Voltage Range (A & B) Storage Temperature Operating Temperature -0.2 to +12 Vdc -0.2 to +Vdd Vdc -65 to +150 C -40 to +85 C Outline Drawing 14 SWITCHES - SMT NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 14 - 23 v01.0101 MICROWAVE CORPORATION HMC174MS8 GaAs MMIC T/R SWITCH DC - 3 GHz Typical Application Circuit 14 SWITCHES - SMT Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 14 - 24 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0101 HMC174MS8 GaAs MMIC T/R SWITCH DC - 3 GHz Evaluation Circuit Board 14 SWITCHES - SMT 14 - 25 List of Material Item J1 - J3 J4 - J7 C1 - C3 C4 U1 PCB* Description PC Mount SMA RF Connector DC Pin 100 pF capacitor, 0402 Pkg. 10,000 pF capacitor, 0603 Pkg. HMC174MS8 T/R Switch 104122 Evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. * Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com |
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